Detecting driving potentials at the buried SiO2 nanolayers in solar cells by chemical-selective nonlinear x-ray spectroscopy
Detecting driving potentials at the buried SiO2 nanolayers in solar cells by chemical-selective nonlinear x-ray spectroscopy
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DOI：
10.1063/5.0156171
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发表时间：
2023-07
影响因子：
4
通讯作者：
M. Horio;T. Sumi;J. Bullock;Y. Hirata;Masashige Miyamoto;Bailey R. Nebgen;T. Wada;T. Senoo;Y. Tsujikawa;Y. Kubota;S. Owada;K. Tono;M. Yabashi;T. Iimori;Y. Miyauchi;M. Zuerch;I. Matsuda;C. Schwartz;W. Drisdell
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文献类型：
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作者：
M. Horio;T. Sumi;J. Bullock;Y. Hirata;Masashige Miyamoto;Bailey R. Nebgen;T. Wada;T. Senoo;Y. Tsujikawa;Y. Kubota;S. Owada;K. Tono;M. Yabashi;T. Iimori;Y. Miyauchi;M. Zuerch;I. Matsuda;C. Schwartz;W. Drisdell
我们提出了一种利用非线性X射线能谱来选择性地检测太阳电池器件埋层中的非对称电势的方法。在探测到与SiO_2芯能级共振的二次谐波信号时，我们直接观察到埋在Al/LiF/SiO_2/Si、TiO_2/SiO_2/Si、Al_2O_3/SiO_2/Si和Al_2O_3/SiO_2/Si异质结中的SiO_2纳米层中存在能带弯曲效应。结果表明，该方法对决定光伏或其他光电子器件功能材料性能的不对称电位具有很高的灵敏度。
We present an approach to selectively examine an asymmetric potential in the buried layer of solar cell devices by means of nonlinear x-ray spectroscopy. Detecting second harmonic generation signals while resonant to the SiO2 core level, we directly observe existence of the band bending effect in the SiO2 nanolayer, buried in the heterostructures of Al/LiF/SiO2/Si, TiO2/SiO2/Si, and Al2O3/SiO2/Si. The results demonstrate high sensitivity of the method to the asymmetric potential that determines performance of functional materials for photovoltaics or other optoelectronic devices.