Microstructural evolution and piezoelectric properties of thick Pb(Zr,Ti)O_3 films deposited by the multi-sputtering method: Part II. Piezoelectric properties
Microstructural evolution and piezoelectric properties of thick Pb(Zr,Ti)O_3 films deposited by the multi-sputtering method: Part II. Piezoelectric properties
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多次溅射法沉积厚Pb(Zr,Ti)O_3薄膜的微观结构演变和压电性能：第二部分。
DOI：
10.1557/jmr.2007.0177
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发表时间：
2007
影响因子：
2.7
通讯作者：
Jong‐Jin Choi
中科院分区：
文献类型：
--
作者：
Chee;Jae;Gun;Hyoun‐Ee Kim;Jong‐Jin Choi
【摘要】：采用射频磁控溅射方法,采用单一氧化物靶材在镀铂硅衬底上沉积了具有可控微观结构和取向的高致密、无裂纹的Pb(Zr,Ti)O_3(PZT)厚膜。通过溶胶-凝胶法施加薄的（100）PZT晶种层并随后重复溅射来调整薄膜的微观结构和取向。当在种子层上沉积薄层时，薄膜具有柱状结构的小颗粒。然而，随着薄膜变厚，它形成了大的非柱状晶粒结构。因此，减少每次沉积的薄膜厚度可以保持柱状微结构。通过将薄膜沉积在(100)取向的种子层上，能够保持薄膜的(100)取向。成功沉积了厚度约为 5 μm 的具有受控取向和微结构的 PZT 厚膜，并对其铁电和压电性能进行了表征。
Highly dense and crack-free Pb(Zr,Ti)O_3 (PZT) thick films with a controlled microstructure and orientation were deposited on a platinized silicon substrate by the radio frequency magnetron sputtering method using a single oxide target. The microstructure and orientation of the films were adjusted by applying a thin (100) PZT seed layer by the sol-gel method and subsequent repeated sputtering. When a thin layer was deposited on the seed layer, the film had small grains with a columnar structure. However, as the film became thicker, it developed a large and non-columnar grain structure. Therefore, reducing the thickness of the film per deposition allowed the columnar microstructure to be maintained. The (100) orientation of the film was able to be maintained by depositing it on a (100) oriented seed layer. PZT thick films with controlled orientations and microstructures were successfully deposited up to a thickness of about 5 μm, and their ferroelectric and piezoelectric properties were characterized.