Nb3Al thin‐film synthesis by electron‐beam coevaporation
Nb3Al thin‐film synthesis by electron‐beam coevaporation
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DOI：
10.1063/1.327783
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发表时间：
1980-03
影响因子：
3.2
通讯作者：
J. Kwo;R. Hammond;T. Geballe
中科院分区：
文献类型：
--
作者：
J. Kwo;R. Hammond;T. Geballe
Nb 3Al薄膜的制备和表征与不同的沉积参数，包括衬底温度，沉积速率，气体掺杂，和外延生长。在最佳衬底温度下制备的Nb-Al样品的晶格常数符合Geller半径的预测，并且随着Al成分的增加，系统的Tc增加，即ΔTc/ΔC为1.9 K/at% Al。在给定的衬底温度下，采用自外延方法导致A15相界扩展1 at% Al，Tc增加2.4 K。通过外推Tc =16.7 K，在这项工作中观察到的最高转变温度，化学计量的Nb 3Al被预测为具有20.7 K的Tc开始。
Nb3Al thin films have been prepared and characterized with varying deposition parameters, including substrate temperature, deposition rate, gas doping, and epitaxial growth. Nb‐Al samples made with the optimum substrate temperature have lattice constants following the prediction of Geller radii and a systematic Tc increment with Al composition, namely, a ΔTc/ΔC of 1.9 K/at% Al. Employment of the self‐epitaxial method results in extending the A15 phase boundary by 1 at% Al and an enhancement of Tc by 2.4 K at a given substrate temperature. By extrapolating from Tc =16.7 K, the highest transition temperature observed in this work, stoichiometric Nb3Al is predicted to have an Tc onset of 20.7 K.