Accumulation layer formation at n-GaAs/electrolyte interface: photoluminescence probe of the kinetic barrier for hydrogen evolution reaction
Accumulation layer formation at n-GaAs/electrolyte interface: photoluminescence probe of the kinetic barrier for hydrogen evolution reaction
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n-GaAs/电解质界面处积累层的形成：析氢反应动力学势垒的光致发光探针
DOI：
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发表时间：
1986
期刊：
影响因子：
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通讯作者：
H. Kita
中科院分区：
文献类型：
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作者：
S. Kaneko;K. Uosaki;H. Kita
当电势低于平带电势时，n-GaAs电极的光致发光强度随正向偏压的增加而增加，表明析氢反应（HER）的动力学势垒导致了电子在表面的积累。通过贵金属（Pt）的表面处理去除了HER的动力学势垒，导致HER速率的显著增加并且不依赖于PL强度，即，没有电子的积累。因此，蚀刻的半导体/电解质界面表现得更像MIS结构而不是肖特基结。
The photoluminescence intensity of the n-GaAs electrode increased with the increase of forward bias when the potential was more negative than the flat band potential, suggesting the accumulation of electrons at the surface caused by a kinetic barrier for hydrogen evolution reaction (HER). The surface treatment by a noble metal (Pt) removes the kinetic barrier for HER, leading to a significant increase of HER rate and no dependence of the PL intensity, i.e., no accumulation of electrons. Thus, an etched semiconductor/electrolyte interface behaves more like a MIS structure rather than the Schottky junction.