Mitigation of J–V distortion in CdTe solar cells by Ga-doping of MgZnO emitter
Mitigation of J–V distortion in CdTe solar cells by Ga-doping of MgZnO emitter
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通过 MgZnO 发射极的 Ga 掺杂减轻 CdTe 太阳能电池中的 J-V 畸变
DOI：
10.1016/j.solmat.2021.111324
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发表时间：
2021
影响因子：
6.9
通讯作者：
J. Sites
中科院分区：
文献类型：
--
作者：
Ramesh Pandey;Akash Shah;A. Munshi;T. Shimpi;Pascal M. Jundt;Jinglong Guo;R. Klie;W. Sampath;J. Sites
具有MgZnO发射极层的基于CdTe的薄膜太阳能电池的电流-电压曲线中的失真并不罕见。即使在标准阳光下这种失真非常细微，但通过使用滤光片去除短波长光子，它们可以大大增强，并且暗曲线开启电压可以显著增加。强有力的建议是，良好的J-V曲线与全光谱光往往依赖于光生电子的陷阱状态中的MgZnO发射极。当CdTe吸收体的载流子浓度随着外部掺杂而增加时，相应地需要更大的MgZnO载流子浓度。基于发射极载流子浓度需要与吸收体的载流子浓度相当的假设，MgZnO的Ga掺杂被示出为几乎消除了大的滤光失真，并且可以论证地上级于依赖于光生作用的MgZnO。此外，它表明，在MgZnO中的光生和恢复是相对缓慢的，因此，没有Ga掺杂，电池效率逐渐提高了大部分的一个小时，在光，和黑暗曲线的开启电压增加类似的时间尺度时，光被删除。
Distortions in the current–voltage curves of CdTe-based thin-film solar cells with MgZnO emitter layers are not uncommon. Even when such distortions are very subtle with standard sunlight, they can be greatly accentuated by the removal of short-wavelength photons with optical filters, and the dark-curve turn-on voltage can be noticeably increased. The strong suggestion is that good J–V curves with full-spectrum light often rely on photogeneration of electrons from trap states in the MgZnO emitter. When the carrier concentration of the CdTe absorber is increased with external doping, there is a corresponding need for a larger MgZnO carrier concentration. Based on the assumption that the emitter carrier concentration needs to be comparable to that of the absorber, Ga-doping of the MgZnO was shown to very nearly eliminate the large filtered-light distortions and is arguably superior to MgZnO that relies on photogeneration. In addition, it was shown that photogeneration and recovery in MgZnO is relatively slow, so that without Ga-doping, the cell efficiency improves gradually for most of an hour in the light, and the turn-on voltage of the dark curve increases on a similar time scale when the light is removed.
影响因子：
6.4
作者：
Li, Deng-Bing;Song, Zhaoning;Yano, Yanfa
通讯作者：
Yano, Yanfa
通过反应共溅射控制掺镓镁锌氧化物中的导带排列和载流子浓度
影响因子：
2.9
作者：
Yeung, Gavin;Wolden, Colin A.
通讯作者：
Wolden, Colin A.