Absolute rate coefficients for photorecombination of beryllium-like and boron-like silicon ions
Absolute rate coefficients for photorecombination of beryllium-like and boron-like silicon ions
复制标题
DOI：
10.1088/0953-4075/49/7/074004
复制
发表时间：
2015-11
期刊：
影响因子：
--
通讯作者：
D. Bernhardt;A. Becker;C. Brandau;M. Grieser;M. Hahn;C. Krantz;M. Lestinsky;O. Novotn'y;R. Repnow;D. Savin;K. Spruck;A. Wolf;A. Muller;S. S. I. F. A. U. Molekulphysik-S.;Justus-Liebig-University Giessen;Leihgesterner Weg 217;35392 Giessen;Germany;M. F. Kernphysik;1. Saupfercheckweg;69117 Heidelberg;I. Institut;16 Heinrich-Buff-Ring;G. H. F. Schwerionenforschung;1. Planckstrasse;64291 Darmstadt;Columbia Astrophysics Laboratory;C. University;New York.;NY 10027;Usa
中科院分区：
文献类型：
--
作者：
D. Bernhardt;A. Becker;C. Brandau;M. Grieser;M. Hahn;C. Krantz;M. Lestinsky;O. Novotn'y;R. Repnow;D. Savin;K. Spruck;A. Wolf;A. Muller;S. S. I. F. A. U. Molekulphysik-S.;Justus-Liebig-University Giessen;Leihgesterner Weg 217;35392 Giessen;Germany;M. F. Kernphysik;1. Saupfercheckweg;69117 Heidelberg;I. Institut;16 Heinrich-Buff-Ring;G. H. F. Schwerionenforschung;1. Planckstrasse;64291 Darmstadt;Columbia Astrophysics Laboratory;C. University;New York.;NY 10027;Usa
我们报告的电子-离子复合的Si 10+形成Si 9+和Si 9+形成Si 8+，分别测量的速率系数。测量是在重离子储存环上用电子-离子合并束技术进行的。电子-离子碰撞能量对于Si 9+在0至50 eV的范围内，对于Si 10+在0至2000 eV的范围内，因此，扩展了先前对Si 10+的测量（Orban等人，2010 Astrophys. J. 721 1603）到更高的能量。实验导出的速率系数的Si 9+和Si 10+离子在等离子体中的重组沿着与简单的参数化。这些速率系数是有用的建模的电荷平衡的硅在光电离等离子体（Si 9+和Si 10+）和碰撞电离等离子体（仅Si 10+）。在相应的温度范围内，实验推导的速率系数与最新的相应的理论结果在实验不确定度范围内一致。
We report measured rate coefficients for electron–ion recombination of Si10+ forming Si9+ and of Si9+ forming Si8+, respectively. The measurements were performed using the electron–ion merged-beams technique at a heavy-ion storage ring. Electron–ion collision energies ranged from 0 to 50 eV for Si9+ and from 0 to 2000 eV for Si10+, thus, extending previous measurements for Si10+ (Orban et al 2010 Astrophys. J. 721 1603) to much higher energies. Experimentally derived rate coefficients for the recombination of Si9+ and Si10+ ions in a plasma are presented along with simple parameterizations. These rate coefficients are useful for the modeling of the charge balance of silicon in photoionized plasmas (Si9+ and Si10+) and in collisionally ionized plasmas (Si10+ only). In the corresponding temperature ranges, the experimentally derived rate coefficients agree with the latest corresponding theoretical results within the experimental uncertainties.