Introducing Technology Computer-Aided Design (Tcad): Fundamentals, Simulations, and Applications
Introducing Technology Computer-Aided Design (Tcad): Fundamentals, Simulations, and Applications
复制标题
计算机辅助设计 (Tcad) 技术简介：基础知识、模拟和应用
DOI：
--
复制
发表时间：
2017
期刊：
影响因子：
--
通讯作者：
C. Maiti
中科院分区：
文献类型：
--
作者：
C. Maiti
对主要的应力和应变工程先进半导体器件进行设计(TCAD)模拟：MOSFET、BJT、HBT、非经典MOS器件、FinFET、硅锗异质FET、太阳能电池、功率器件和存储器件。本书重点介绍如何设置3D TCAD仿真工具，从掩模布局到工艺和器件仿真，包括面向制造的设计(DFM)，以及从器件建模到SPICE参数提取。这本书还提供了一种创新的新方法，使用各种半导体结构的先进TCAD模拟来教授半导体工艺和器件设计的基本原理。所选的模拟示例来自当今使用的最流行的设备，并提供了有用的技术和设备物理见解。为了扩大TCAD在当今先进技术时代的作用，已将工艺紧凑建模和DFM问题包括在设计技术接口生成中。
design (TCAD) simulations of major state-of-the-art stressand strain-engineered advanced semiconductor devices: MOSFETs, BJTs, HBTs, nonclassical MOS devices, finFETs, silicongermanium hetero-FETs, solar cells, power devices, and memory devices. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including design for manufacturing (DFM), and from device modeling to SPICE parameter extraction. The book also offers an innovative and new approach to teaching the fundamentals of semiconductor process and device design using advanced TCAD simulations of various semiconductor structures. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. To extend the role of TCAD in today’s advanced technology era, process compact modeling and DFM issues have been included for design–technology interface generation.