Anodic bonding of evaporated glass structured with lift-off technology for hermetical sealing
Anodic bonding of evaporated glass structured with lift-off technology for hermetical sealing
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DOI：
10.1016/s0924-4247(00)00300-9
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发表时间：
2000-05-22
影响因子：
4.6
通讯作者：
Bauer, K
中科院分区：
文献类型：
--
作者：
Sassen, S;Kupke, W;Bauer, K
本文报道了一种用于微机械硅传感器和驱动器的电子束蒸发玻璃薄层(d小于或等于5µm)的增强阳极键合技术。这种与MOS兼容的技术被开发用于具有电结构的硅片和体微机械加工的硅片之间的键合。键合框架结构可以用密封的金属馈电槽实现，特别适合于具有小传感间隙和快速RC时间常数的电容式传感器。为了提高玻璃层的质量，已经开发了一种利用金属作为牺牲层来构造玻璃的剥离技术，因为衬底被加热到大约300摄氏度。给出了键合过程中电流流动的简单模型。将数值计算的电流-电压特性与测量数据进行了比较。实现了一个静电激励硅谐振器，验证了该技术的适用性。(C)2000 Elsevier Science S.A.保留所有权利。
This paper reports on an enhanced anodic bonding technology of thin e-beam evaporated glass layers (d less than or equal to 5 mu m) for micromachined silicon sensors and actuators. This MOS-compatible technology has been developed for bonding between a silicon wafer with electrical structures and a bulk micromachined silicon wafer. A bonding frame structure can be realized with hermetically sealed metal feedtroughs especially suited for capacitive sensors with a small sensing gap and fast RC-time constants. A lift-off technology for structuring the glass using metal as a sacrificial layer has been developed, because the substrates were heated to about 300 degrees C in order to enhance the quality of the glass layer. A simple model for the current flow during the bonding process is given. The numerically calculated current-voltage behaviour is compared with measured data. An electrostatically excitated silicon resonator is realized to demonstrate the applicability of this technology. (C) 2000 Elsevier Science S.A. All rights reserved.