Ag/n–Si/p–MgSe/(Ag, C, Au, Pt) devices designed as current rectifiers, photodetectors and as ac signal filters suitable for VLC, IR and 6G technologies
Ag/n–Si/p–MgSe/(Ag, C, Au, Pt) devices designed as current rectifiers, photodetectors and as ac signal filters suitable for VLC, IR and 6G technologies
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DOI：
10.1088/1402-4896/ac9be8
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发表时间：
2022-10
期刊：
影响因子：
2.9
通讯作者：
R. A. Almotiri;A. Qasrawi;S. Algarni
中科院分区：
文献类型：
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作者：
R. A. Almotiri;A. Qasrawi;S. Algarni
本文报道了p-MgSe薄膜作为电子器件p-层有源层的制备和实际应用。在10-5 mbar的真空压力下，通过真空蒸发技术在n− Si衬底上制备MgSe薄膜。薄膜的形态，结构，电学和光电研究。在确定p-MgSe的功函数为6.74 eV之后，研究了Ag、C、Au和Pt金属接触对n-Si/p-MgSe（SM）二极管性能的作用。观察到，对于Ag/SM/C和Ag/SM/Ag二极管结构，在3.0V的施加电压下分别实现了104和102的高整流比。此外，对于Ag/SM/Ag通道，观察到对可见光和红外光的电流响应率为1.000.70 A W-1。Ag/SM/Ag二极管的噪声等效比、外量子效率和探测率满足可见光和红外通信探测器的要求。此外，对电容-电压特性的研究表明了电容器特性。Ag/SM/Ag电容器的耗尽可能高达50 MHz。此外，对电容、电阻和截止频率谱的分析表明，Ag/SM/Ag器件通道可以作为负电阻源，其截止频率值适合6 G技术要求。
Herein the fabrication and practical applications of p− MgSe thin films as active p− layer of electronic devices are reported. MgSe films are prepared by a vacuum evaporation technique onto n− Si substrates under a vacuum pressure of 10–5 mbar. The films are morphologically, structurally, electrically and opto-electronically investigated. Having identified the work function of p− MgSe as 6.74 eV, the role of Ag, C, Au and Pt metal contacts on the performance of the n− Si/ p− MgSe (SM) diodes are studied. It is observed that high rectification ratios of ∼104 and 102 are achieved at an applied voltage of 3.0 V for the Ag/SM/C and Ag/SM/Ag diode structures, respectively. In addition, a current responsivity to visible and infrared light of ∼0.70 A W−1 is observed for the Ag/SM/Ag channels. The noise equivalent ratios, the external quantum efficiency and the detectivity of the Ag/SM/Ag diodes suit requirements of visible light and infrared communication detectors. Moreover, studies of the capacitance-voltage characteristics showed capacitor characteristics. The depleting of the Ag/SM/Ag capacitors is possible up to 50 MHz. Furthermore, analyzing the capacitance, resistance and cutoff frequency spectra have shown that the Ag/SM/Ag device channels can perform as negative resistance sources with cutoff frequency values that suits 6G technology requirements.