Split-gate InGaAs quantum wire device operated at 80 K
Split-gate InGaAs quantum wire device operated at 80 K
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80 K 温度下运行的分栅 InGaAs 量子线器件
DOI：
10.1109/16.239818
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发表时间：
1993
期刊：
影响因子：
--
通讯作者：
M. Inoue
中科院分区：
文献类型：
--
作者：
K. Yoh;A. Nishida;M. Inoue
仅给出摘要表格。报告了基于分裂栅深台面蚀刻结构的 InGaAs 量子线器件的电学特性。在 80 K 下观察到了量子化电导和量子化电流。器件的异质结构由生长在未掺杂 GaAs 衬底上的 2000-AA GaAs 层、1.0-μm AlSb 缓冲层、2000-AA (Al/sub 0.5/Ga/sub 0.5/)Sb 缓冲层、70-AA AlSb 层、150-AA InAs 层、 150-AA (Al/sub 0.5/Ga/sub 0.5/)Sb 层和 100-AA GaSb 层。使用宽度为 3500 AA 的 InAs 线，在 80 K 下观察到清晰的量化电导阶跃为 (2e/sup 2//h) 的三到五倍。在高达 120 K 的更高温度下观察到明显的电导阶跃。然而，在高于 100 K 的较高温度下阶跃的电导值与 (2e/sup 2//h) 的倍数不一致。这可能是由于寄生 MESFET 在高温下导通能力非常弱。 >
Summary form only given. Reports the electrical characteristics of InGaAs quantum wire devices based on deep mesa-etched structures with split gate. Quantized conductance and quantized currents have been observed at 80 K. The heterostructure of the devices consists of a 2000-AA GaAs layer grown on undoped GaAs substrates, a 1.0- mu m AlSb buffer layer, a 2000-AA (Al/sub 0.5/Ga/sub 0.5/)Sb buffer layer, a 70-AA AlSb layer, a 150-AA InAs layer, a 150-AA (Al/sub 0.5/Ga/sub 0.5/)Sb layer, and a 100-AA GaSb layer. Clear quantized conductance steps of three to five fold multiples of (2e/sup 2//h) were observed at 80 K with an InAs wire width of 3500 AA. Clear conductance steps were observed at even higher temperatures up to 120 K. However, the conductance values at steps at those higher temperatures above 100 K do not agree with multiples of (2e/sup 2//h). This is probably due to the parasitic MESFET which turns on very weakly at high temperatures. >