Millimeter-wave signal generation from a monolithic semiconductor laser via subharmonic optical injection
Millimeter-wave signal generation from a monolithic semiconductor laser via subharmonic optical injection
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通过分谐波光注入从单片半导体激光器生成毫米波信号
DOI：
10.1109/68.868007
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发表时间：
2000
影响因子：
2.6
通讯作者：
Y. Ogawa
中科院分区：
文献类型：
--
作者：
Yang Jing Wen;Hai Feng Liu;D. Novak;Y. Ogawa
本文提出了一种利用半导体激光器产生毫米波信号的新技术，该技术不需要腔内可饱和吸收体，而是利用激光器谐振腔往返频率的次谐波注入短光脉冲，驱动激光器在其谐振频率处振荡，从而使信号频率倍增。使用在连续波条件下操作的多段半导体激光器，通过以等于第四次谐波（8.66 GHz）的重复率注入光脉冲来产生34.64 GHz信号。产生的毫米波信号具有较大的次谐波抑制比（>17 dB）、较大的频率失谐范围（>300 MHz）、较低的相位噪声（-77.5 dBc/Hz）和较大的锁定范围（>400 MHz）。
A new technique for generating millimeter-wave (mm-wave) signals from a semiconductor laser without an intracavity saturable absorber, is presented, The method multiplies the signal frequency by using optical injection of short optical pulses at a subharmonic of the cavity round-trip frequency to drive the laser oscillating at its resonant frequency. A 34.64 GHz signal is generated using a multisection semiconductor laser operated under continuous wave conditions, by injecting optical pulses at a repetition rate equal to the fourth subharmonic (8.66 GHz). The generated millimeter-wave signal exhibits a large subharmonic suppression ratio (>17 dB), large frequency detuning range (>300 MHz), low levels of phase-noise (-77.5 dBc/Hz), and large locking range (>400 MHz).