Additive Laser Metal Deposition Onto Silicon for Enhanced Microelectronics Cooling
Additive Laser Metal Deposition Onto Silicon for Enhanced Microelectronics Cooling
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DOI：
10.1109/ectc.2019.00302
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发表时间：
2019-05
期刊：
影响因子：
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通讯作者：
Arad Azizi;Matthias A. Daeumer;Jacob C. Simmons;B. Sammakia;B. Murray;Scott N. Schiffres
中科院分区：
文献类型：
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作者：
Arad Azizi;Matthias A. Daeumer;Jacob C. Simmons;B. Sammakia;B. Murray;Scott N. Schiffres
我们先前展示了Sn 3Ag 4 Ti合金如何通过选择性激光熔化（SLM）牢固地结合到硅上。通过采用该技术，热管理装置（例如，微通道、蒸汽室蒸发器、热管）可以直接印刷到电子封装（硅管芯）上，而不使用热界面材料。在浸没两相冷却（池沸腾）下，我们比较了三种芯片冷却方法（传统散热器、裸硅芯片和增材制造的金属微鳍片）在高热通量条件（100 W/cm^2）下的性能。热传递模拟表明，硅微鳍片的芯片温度显着降低。降低芯片工作温度或提高时钟速度是该技术的一些优点，这是由于消除了电子封装中的热界面材料。该技术的性能和可靠性方面进行了讨论，通过实验和计算模型。
We previously demonstrated how the Sn3Ag4Ti alloy can robustly bond onto silicon via selective laser melting (SLM). By employing this technology, thermal management devices (e.g., micro-channels, vapor chamber evaporators, heat pipes) can be directly printed onto the electronic package (silicon die) without using thermal interface materials. Under immersion two-phase cooling (pool boiling), we compare the performance of three chip cooling methods (conventional heat sink, bare silicon die and additively manufactured metal micro-fins) under high heat flux conditions (100 W/cm^2). Heat transfer simulations show a significant reduction in the chip temperature for the silicon micro-fins. Reduction of the chip operating temperature or increase in clock speed are some of the advantages of this technology, which results from the elimination of thermal interface materials in the electronic package. Performance and reliability aspects of this technology are discussed through experiments and computational models.