Fully coupled 3-D device simulation of negative capacitance FinFETs for sub 10 nm integration
Fully coupled 3-D device simulation of negative capacitance FinFETs for sub 10 nm integration
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DOI：
10.1109/iedm.2016.7838403
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发表时间：
2016-12
期刊：
影响因子：
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通讯作者：
H. Ota;T. Ikegami;J. Hattori;K. Fukuda;S. Migita;A. Toriumi
中科院分区：
文献类型：
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作者：
H. Ota;T. Ikegami;J. Hattori;K. Fukuda;S. Migita;A. Toriumi
使用新开发的技术计算机辅助设计 (TCAD) 模拟分析了 10 nm 以下栅极长度的负电容 FinFET (NC-FinFET) 的性能。该仿真将 Landau-Khalatnikov (L-K) 方程与 FinFET 的 3D 物理方程完全耦合。由于栅漏耦合增强了 NC，首次揭示了 NC-FinFET 具有出色的抗短沟道效应能力。栅极长度为 10 nm 的 NC-FinFET 预计运行时的能效是传统 FinFET 的 26 倍以上。
Performances of negative capacitance FinFETs (NC-FinFETs) at sub 10 nm gate length are analyzed with a newly developed technology computer-aided design (TCAD) simulation. This simulation fully couples the Landau-Khalatnikov (L-K) equation with the physical equations for FinFETs in 3-D. It reveals an excellent immunity against short-channel effects in NC-FinFETs owing to NC-enhancement by the gate-to-drain coupling, for the first time. NC-FinFETs with a gate length of 10 nm are projected to operate with more than 26 times energy-efficiency of conventional FinFETs.