High temperature behavior of Pt and Pd on GaN
High temperature behavior of Pt and Pd on GaN
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DOI：
10.1063/1.364091
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发表时间：
1997-04
影响因子：
3.2
通讯作者：
K. Duxstad;E. Haller;K. Yu
中科院分区：
文献类型：
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作者：
K. Duxstad;E. Haller;K. Yu
我们研究了在GaN上生长的铂和钯薄膜在800℃以下的热稳定性。我们发现，对于铂薄膜，在低至600℃时会形成亚微米尺寸的金属球体，而在725℃及更高的温度下薄膜会形成不连续的岛。在700°C以上，Pd开始形成孤岛，由于热产生的压应力，薄膜区域开始分层。这些薄膜的一般行为与陶瓷上的大多数金属薄膜相同，这表明GaN上的金属不会像通常在普通元素和化合物半导体上那样发生反应。在确定哪些金属可以作为GaN的良好电触点时，必须考虑这种类似陶瓷的行为，特别是对于高温应用或合金触点。
We report on the thermal stability of Pt and Pd thin films on GaN up to 800 °C. We have found that for Pt thin films submicron size metal spheres form at temperatures as low as 600 °C and the film turns into discontinuous islands at 725 °C and above. Pd begins to form islands above 700 °C and areas of the film begin to delaminate due to thermally generated compressive stress. The general behavior of these films is that found for most metal films on ceramics, suggesting that metals on GaN do not react as they typically do on common elemental and compound semiconductors. This ceramic-like behavior must be considered when determining which metals may act as good electrical contacts for GaN, especially for high temperature applications or alloyed contacts.