Integrated nanoscale silicon sensors using top-down fabrication
Integrated nanoscale silicon sensors using top-down fabrication
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DOI：
10.1063/1.1630853
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发表时间：
2003-12-01
影响因子：
4
通讯作者：
Bashir, R
中科院分区：
文献类型：
--
作者：
Elibol, OH;Morisette, D;Bashir, R
基于半导体器件的化学和生物实体的感测已经通过使用微米和纳米级场效应器件和接近的变体而被证明。尽管碳纳米管和硅纳米线已经被证明是单分子生物传感器，但是用于创建这些设备的制造方法通常与现代半导体制造技术不兼容，并且它们的大规模集成是有问题的。这些缺点通过微电子制造技术的最新进展而得到解决，这些微电子制造技术导致了类宝石结构的实现。在这里，我们报告了一种方法来制造硅纳米线在精确的位置，使用这种技术。我们的方法允许实现真正的集成传感器能够生产密集阵列。这些设备的灵敏度在环境气体成分的变化也示出。(C)2003年，美国物理学会。
Semiconductor device-based sensing of chemical and biological entities has been demonstrated through the use of micro- and nanoscale field-effect devices and close variants. Although carbon nanotubes and silicon nanowires have been demonstrated as single molecule biosensors, the fabrication methods that have been used for creating these devices are typically not compatible with modern semiconductor manufacturing techniques and their large scale integration is problematic. These shortcomings are addressed by recent advancements in microelectronic fabrication techniques which resulted in the realization of nanowire-like structures. Here we report a method to fabricate silicon nanowires at precise locations using such techniques. Our method allows for the realization of truly integrated sensors capable of production of dense arrays. Sensitivity of these devices to changes in the ambient gas composition is also shown. (C) 2003 American Institute of Physics.