Carbon nanotube technology for solid state and vacuum electronics

Carbon nanotube technology for solid state and vacuum electronics
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用于固态和真空电子学的碳纳米管技术

DOI:
10.1049/ip-cds:20040408
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发表时间:
2004
期刊:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
影响因子:
--
通讯作者:
D. Pribat
D. Pribat
中科院分区:
--
文献类型:
--
作者:
K. Teo;R. Lacerda;M. Yang;A. S. Teh;L. Robinson;S. Dalal;N. Rupesinghe;M. Chhowalla;Seung;D. Jefferson;D. Hasko;G. Amaratunga;W. L. Milne;P. Legagneux;L. Gangloff;E. Minoux;J. Schnell;D. Pribat

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作者展示了利用碳纳米管作为有源通道和发射体的固态和真空电子器件的制备。采用化学气相沉积(CVD)和等离子体增强化学气相沉积(PECVD)分别在衬底上直接沉积单壁和多壁碳纳米管(CNT)。用单壁碳纳米管制作了顶栅和侧栅场效应晶体管。垂直排列的多壁碳纳米管用于制备场发射体阵列或微门控场发射体,在场发射显示器、微波放大器或电子枪等领域具有潜在的应用前景。
The authors demonstrate the fabrication of solid state and vacuum electronic devices using carbon nanotubes as the active channel and emitters. Single wall and multiwall carbon nanotubes (CNT) are deposited directly on substrates using chemical vapour deposition (CVD) and plasma enhanced chemical vapour deposition (PECVD), respectively. The fabrication of top gate and side gate field effect transistors is demonstrated using single wall CNTs. Vertically aligned multiwall CNTs are used to fabricate field emitter arrays or micro-gated field emitters, which have potential application in field emission displays, microwave amplifiers or electron guns.
DOI: 10.1016/0022-0248(76)90115-9
发表时间: 1976-01-01
影响因子: 1.8
作者:
OBERLIN, A;ENDO, M;KOYAMA, T
通讯作者: KOYAMA, T