Effect of p–n Junction Location on Characteristics of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
Effect of p–n Junction Location on Characteristics of InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
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DOI：
10.1143/jjap.47.7101
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发表时间：
2008-09
影响因子：
1.5
通讯作者：
Lai Wang;Hongtao Li;Guangyi Xi;Yang Jiang;Wei Zhao;Yanjun Han;Yi Luo
中科院分区：
文献类型：
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作者：
Lai Wang;Hongtao Li;Guangyi Xi;Yang Jiang;Wei Zhao;Yanjun Han;Yi Luo
通过电流-电压（I-V）、电致发光（EL）和电容-电压（C-V）测量研究了不同p-n结位置的InGaN/GaN多量子阱（MQW）发光二极管（LED）。当注入电流为20 mA时，由于n-InGaN/GaN多量子阱与p型材料之间的距离缩短，发光二极管的工作电压降低了0.15 V，发光强度提高了14%，发光波长从465 nm移动到455 nm。C-V测量表明，当LED被正向偏置时，仅紧邻p型区的量子阱仍然保持在耗尽区内部。分析表明，通过优化InGaN量子威尔斯阱中p-n结的位置，改善空穴的隧穿注入，削弱量子阱中的压电场，可以改善发光二极管的特性。
InGaN/GaN multiple-quantum-well (MQW) light-emitting diodes (LEDs) with different p–n junction locations have been investigated by current–voltage (I–V), electroluminescence (EL), and capacitance–voltage (C–V) measurements. At 20 mA injection current, the operating voltage of the LEDs decreases by 0.15 V, the EL intensity increases by 14% and the EL wavelength shifts from 465 to 455 nm owing to the shortening of the distance between n-InGaN/GaN MQW and p-type materials. C–V measurements indicate that only the quantum well immediately adjacent to the p-type region still remains inside the depletion region when LEDs are forward biased. Analysis reveals that the characteristics of the LEDs can be improved by optimizing the p–n junction location through the improvement of the holes' tunneling injection and weakening of the piezoelectric field in InGaN quantum wells.