Memory effects of SrBi2Ta2O9 capacitor on silicon with a silicon nitride buffer
Memory effects of SrBi2Ta2O9 capacitor on silicon with a silicon nitride buffer
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DOI：
10.1080/10584589808208043
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发表时间：
1998-03
影响因子：
0.7
通讯作者：
Jin-Ping Han;Xin Guo;T. Ma
中科院分区：
文献类型：
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作者：
Jin-Ping Han;Xin Guo;T. Ma
摘要研究了在Si衬底上淀积具有超薄氮化硅缓冲层的SrBi 2 Ta 2 O 9（SBT）薄膜的存储效应。电容-电压（C-V）测量表明界面陷阱的密度低，这表明氮化硅缓冲层和Si衬底之间的良好界面。C-V特性曲线显示出与SBT膜的极化相一致的滞后，但与由于电子注入/俘获效应而引起的滞后相反。当在-7V和+7V之间来回扫描时，观察到± 2 V的相当大的滞后窗口。单脉冲编程实验的结果表明，开关时间小于8 ns，这是实验中可用的最短脉冲。这些结果都是在反射极化低至0.15 μC/cm 2的样品上获得的。疲劳测试表明，在1011个开关周期后，存储器窗口仅适度退化。生成气体退火实验的结果表明，没有退化到…
Abstract The memory effects of SrBi2Ta2O9 (SBT) films deposited on Si substrates with an ultra-thin silicon nitride buffer layer have been investigated. The Capacitance-Voltage (C-V) measurements indicate low densities of interface traps, suggesting a good interface between the silicon nitride buffer layer and the Si substrate. The C-V characteristics show hysteresis that is consistent with the polarization of the SBT film, but opposite to that due to the electron injection/trapping effect. When swept back and forth between -7V and + 7V, a sizable hysteresis window of ± 2V is observed. The results from a single-pulse programming experiment suggest that the switching time is shorter than 8 ns, the shortest pulse available for the experiment. These results are all obtained on samples that exhibit remanent polarizations as low as 0.15 μC/cm2. Fatigue tests show only modest degradation of the memory window after 1011 switching cycles. Results from forming gas annealing experiments indicate no degradation up t...