Comparison of nanoscale measurements of strain and stress using electron back scattered diffraction and confocal Raman microscopy
Comparison of nanoscale measurements of strain and stress using electron back scattered diffraction and confocal Raman microscopy
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DOI：
10.1063/1.3026542
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发表时间：
2008-11-10
影响因子：
4
通讯作者：
Cook, Robert F.
中科院分区：
文献类型：
--
作者：
Vaudin, Mark D.;Gerbig, Yvonne B.;Cook, Robert F.
使用电子背散射衍射 (EBSD) 和共焦拉曼显微镜 (CRM) 测量了小至 10 MPa 的 Si 应力，空间分辨率分别为 10 nm 和 100 nm。在这两种技术中，数据都是通过 (001) Si 中的楔形压痕收集的。 EBSD 测量应力和应变张量，CRM 测量单轴应力。结果非常吻合，除了压痕附近，表面敏感的 EBSD 结果表明应力较大。当 CRM 激光激发波长减小时，结果收敛，探测更小的深度。应力分布与 Eshelby 分析预测的平方反比幂律一致。
Stresses in Si as small as 10 MPa have been measured using electron backscattered diffraction (EBSD) and confocal Raman microscopy (CRM) with spatial resolutions of 10 nm and 100 nm, respectively. In both techniques, data were collected across wedge indentations in (001) Si. EBSD measured the stress and strain tensors and CRM measured the uniaxial stress. The results agreed very well except close to the indentation, where the surface-sensitive EBSD results indicated larger stresses. Results converged when the CRM laser excitation wavelength was reduced, probing smaller depths. The stress profiles are consistent with the inverse-square power law predicted by Eshelby analysis.