Blue light emitting diodes grown on freestanding (11-20) a-plane GaN substrates
Blue light emitting diodes grown on freestanding (11-20) a-plane GaN substrates
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DOI：
10.1063/1.2832645
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发表时间：
2008-01
影响因子：
4
通讯作者：
Jingfei Liu;J. Limb;J. Ryou;D. Yoo;C. Horne;R. Dupuis;Z. H. Wu;A. Fischer;F. Ponce;A. Hanser;Lianghong Liu;E. Preble;K. Evans
中科院分区：
文献类型：
--
作者：
Jingfei Liu;J. Limb;J. Ryou;D. Yoo;C. Horne;R. Dupuis;Z. H. Wu;A. Fischer;F. Ponce;A. Hanser;Lianghong Liu;E. Preble;K. Evans
采用金属-有机化学气相沉积方法，在独立的非极性氮化镓（11-20）a平面衬底上制备了可见蓝光二极管。优化了生长条件，使无表面特征的GaN非极性同外延层生长光滑，从而使发光二极管外延结构不存在诸如螺纹位错和层错等晶体缺陷。发光二极管的电致发光表现出峰值波长为~ 450nm，并且在热效应被证明之前与低电流密度下的电流水平无关。
Visible blue light emitting diodes have been produced on freestanding nonpolar GaN (11-20) a-plane substrates by metal-organic chemical vapor deposition. The growth conditions have been optimized for smooth growth morphology of GaN nonpolar homoepitaxial layers without surface features, leading to light emitting diode epitaxial structures that are free of crystalline defects such as threading dislocations and stacking faults. Electroluminescence of light emitting diodes exhibit peak wavelengths of ∼450nm and are independent of current level at low current densities before the heating effects are evidenced.