Strain effect and channel length dependence of bias temperature instability on complementary metal-oxide-semiconductor field effect transistors with high-k/SiO2 gate stacks
Strain effect and channel length dependence of bias temperature instability on complementary metal-oxide-semiconductor field effect transistors with high-k/SiO2 gate stacks
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DOI：
10.1063/1.2967442
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发表时间：
2008-09
影响因子：
4
通讯作者：
J. Liao;Yean-Kuen Fang;Y. Hou;C. Hung;P. Hsu;K. Lin;K. Huang;Tze-Liang Lee;M. Liang
中科院分区：
文献类型：
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作者：
J. Liao;Yean-Kuen Fang;Y. Hou;C. Hung;P. Hsu;K. Lin;K. Huang;Tze-Liang Lee;M. Liang
详细研究了HfSiON介质双金属栅互补金属氧化物半导体场增强型晶体管偏置温度不稳定性的应变效应和沟道长度关系。当沟道长度大于0.1μm时，正、负偏压温度不稳定性均不受拉伸应变的明显影响。当通道缩小到0.1NBTI m以下时，PBTI胁迫后的降解仍然不受应变的影响，但μ降解显著增强。此外，在恒定电压和场应力的情况下，对BTI与沟道长度的关系进行了广泛的研究。
The strain effect and channel length dependence of bias temperature instability on dual metal gate complementary metal-oxide-semiconductor field enhanced transistors with HfSiON dielectric were studied in detail. For channel length larger than 0.1 μm, both positive and negative bias temperature instabilities (PBTI and NBTI) were not affected by the tensile strain obviously. As the channel scaling down to less than 0.1 μm, the degradation after PBTI stress was still not influenced by the strain, however, the NBTI degradation was enhanced significantly. In addition, the dependence of BTI on channel length was extensively investigated under constant voltage and field stress.