Twinned epitaxial layers formed on Si(111)√3×√3-B
Twinned epitaxial layers formed on Si(111)√3×√3-B
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Si(111)√3×√3-B上形成的孪生外延层
DOI：
10.1116/1.581199
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
T. Ogino
中科院分区：
文献类型：
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作者：
H. Hibino;K. Sumitomo;T. Ogino
研究了Si(111)√3×√3-B上双晶外延Si层的生长过程及其热稳定性。在生长初期，形成了双孪的two- bilayhigh （2-BL-high）和非双孪BL-high岛，当表面B浓度较高时，双孪的2BL岛多于非双孪的BL岛。√3×√3重建的结构域边界是优先的岛屿成核位点，特别是对于非孪生BL岛屿。因此，为了使外延层与已生长的孪晶层生长成双晶，必须进行生长后退火，以增加表面B浓度并降低畴边界密度。另一方面，孪晶层转变为非孪晶层的温度在很大程度上取决于厚度。我们证明了通过精确控制生长和后生长退火参数，生长具有与衬底（多型）孪晶和非孪晶取向的层的超晶格的可能性。
We investigate the growth process of twinned epitaxial Si layers on Si(111)√3×√3-B and their thermal stability. In the initial growth stages, twinned two-bilayer-high (2-BL-high) and untwinned BL-high islands are formed, and at higher surface B concentration, there are more twinned 2BL islands than untwinned BL islands. Domain boundaries of the √3×√3 reconstruction act as preferential island nucleation sites, especially for untwinned BL islands. Therefore, to grow epitaxial layers twinned with the already-grown twinned layers, post-growth anneal is essential to increase the surface B concentration and to reduce the domain boundary density. On the other hand, the temperature at which twinned layers are transformed into untwinned layers strongly depends on the thickness. We demonstrate the possibility of growing superlattices of layers that have twinned and untwinned orientations with the substrate (polytypes) by precisely controlling the growth and post-growth anneal parameters.