Electrical Characteristics of Controlled-Polarization-Type Ferroelectric-Gate Field-Effect Transistor
Electrical Characteristics of Controlled-Polarization-Type Ferroelectric-Gate Field-Effect Transistor
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DOI：
10.1143/jjap.47.8874
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发表时间：
2008-12-01
影响因子：
1.5
通讯作者：
Fujimura, Norifumi
中科院分区：
文献类型：
--
作者：
Fukushima, Tadahiro;Yoshimura, Takeshi;Fujimura, Norifumi
提出了一种新型的具有极性半导体沟道的铁电栅场效应晶体管，称为可控极化型铁电栅场效应晶体管。该器件的基本因素是通过极性半导体（如ZnO或GaN）的自发极化来稳定铁电膜的自发极化。我们提出了两种类型的控制LED极化型铁电栅薄膜晶体管（TFT），这是ZnO/YMnO 3/Pt底栅型结构和Pt/PZT/ZnO顶栅型结构。这两种结构都显示了n沟道型晶体管的操作与记忆效应源于铁电性。从铁电栅TFT的电学特性出发，讨论了铁电性、栅漏电流、空间电荷和电荷注入对器件工作的影响。[DOI 10.1143/JJAP.47.8874]
We propose a novel ferroelectric-gate field-effect transistor (FET) with a polar semiconductor channel, which is called a controlled-polarization- type ferroelectric-gate FET. The essential factor for this device is the stabilization of the spontaneous polarization of the ferroelectric film by the spontaneous polarization of a polar semiconductor, such as ZnO or GaN. We demonstrate two types of control led-polarization-type ferroelectric-gate thin film transistors (TFTs), which are the ZnO/YMnO3/Pt bottom-gate-type structure and Pt/PZT/ZnO top-gate-type structure. Both structures show n-channel-type transistor operation with the memory effect originating from ferroelectricity. From the electrical characteristics of ferroelectric-gate TFTs, the effects of ferroelectricity, gate leakage current, space charge, and charge injection on the device operation are discussed. [DOI: 10.1143/JJAP.47.8874]