Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics
Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics
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DOI：
10.1038/s41598-020-58592-5
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发表时间：
2020-02
影响因子：
4.6
通讯作者：
H. Taz;B. Prasad;Yen-Lin Huang;Zuhuang Chen;S. Hsu;R. Xu;Vishal P. Thakare;T. Sakthivel;Chenze Liu;M. Hettick;R. Mukherjee;S. Seal;Lane W. Martin;A. Javey;G. Duscher;R. Ramesh;R. Kalyanaraman
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文献类型：
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作者：
H. Taz;B. Prasad;Yen-Lin Huang;Zuhuang Chen;S. Hsu;R. Xu;Vishal P. Thakare;T. Sakthivel;Chenze Liu;M. Hettick;R. Mukherjee;S. Seal;Lane W. Martin;A. Javey;G. Duscher;R. Ramesh;R. Kalyanaraman
A room temperature amorphous ferromagnetic oxide semiconductor can substantially reduce the cost and complexity associated with utilizing crystalline materials for spintronic devices. We report a new material (Fe0.66Dy0.24Tb0.1)3O7-x(FDTO), which shows semiconducting behavior with reasonable electrical conductivity (~500 mOhm-cm), an optical band-gap (2.4 eV), and a large enough magnetic moment (~200 emu/cc), all of which can be tuned by varying the oxygen content during deposition. Magnetoelectric devices were made by integrating ultrathin FDTO with multiferroic BiFeO3. A strong enhancement in the magnetic coercive field of FDTO grown on BiFeO3validated a large exchange coupling between them. Additionally, FDTO served as an excellent top electrode for ferroelectric switching in BiFeO3with no sign of degradation after ~1010switching cycles. RT magneto-electric coupling was demonstrated by modulating the resistance states of spin-valve structures using electric fields.
