Room-temperature reversible spin Hall effect
Room-temperature reversible spin Hall effect
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DOI：
10.1103/physrevlett.98.156601
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发表时间：
2007-04-13
影响因子：
8.6
通讯作者：
Maekawa, S.
中科院分区：
文献类型：
--
作者：
Kimura, T.;Otani, Y.;Maekawa, S.
可逆自旋霍尔效应包括正自旋霍尔效应和反自旋霍尔效应，在室温下以电学方式检测到。具有强自旋轨道相互作用的铂丝不仅用作自旋电流吸收器，而且在特殊设计的横向结构中也用作自旋电流源。室温下获得的自旋霍尔电导率为2: 4 x 10(4) (Omega m)(-1)，比之前报道的半导体系统值大10(4)倍。实验证实，从正自旋霍尔效应和反自旋霍尔效应获得的自旋霍尔电导率是相同的，证明了自旋电流和充电电流之间的 Onsager 倒数关系。
Reversible spin Hall effect comprising the direct and inverse spin Hall effects was electrically detected at room temperature. A platinum wire with a strong spin-orbit interaction is used not only as a spin current absorber but also as a spin-current source in the specially designed lateral structure. The obtained spin Hall conductivities are 2: 4 x 10(4) (Omega m)(-1) at room temperature, 10(4) times larger than the previously reported values of semiconductor systems. Spin Hall conductivities obtained from both the direct and inverse spin Hall effects are experimentally confirmed to be the same, demonstrating the Onsager reciprocal relations between spin and charge currents.