Nanoscale wafer patterning using SPM induced local anodic oxidation in InP substrates
Nanoscale wafer patterning using SPM induced local anodic oxidation in InP substrates
复制标题
使用 SPM 在 InP 衬底中诱导局部阳极氧化进行纳米级晶圆图案化
DOI：
10.1088/1361-6641/ac3f20
复制
发表时间：
2021
影响因子：
1.9
通讯作者：
Ovenden C
中科院分区：
文献类型：
--
作者：
Ovenden C
原子力显微镜（AFM）辅助局部阳极氧化（LAO）提供了优于其他半导体制造技术，因为它是一种低污染的方法。我们展示了深和高度可重复的纳米孔阵列的InP使用LAO制造。纳米孔和纳米氧化物丘的半径和深度通过改变AFM针尖偏压和湿度独立地控制，最大纳米孔深度为15.6±1.2 nm。此外，针尖写入速度对氧化物线形成的影响进行了比较，为n型，p型和半绝缘衬底，这表明，n型InP的氧化速度较慢，半绝缘或p型InP。最后，我们计算出半绝缘InP的LAO的活化能为0.4 eV，这表明氧化机制类似于等离子体氧化过程中发生的氧化。
Atomic force microscopy (AFM) assisted local anodic oxidation (LAO) offers advantages over other semiconductor fabrication techniques as it is a low contamination method. We demonstrate the fabrication of deep and highly reproducible nanohole arrays on InP using LAO. Nanohole and nano-oxide mound radius and depth are controlled independently by altering AFM tip bias and humidity, with a maximum nanohole depth of 15.6±1.2 nm being achieved. Additionally, the effect of tip write speed on oxide line formation is compared for n-type, p-type and semi-insulating substrates, which shows that n-type InP oxidizes at a slower rate that semi-insulated or p-type InP. Finally, we calculate the activation energy for LAO of semi-insulating InP to be 0.4 eV, suggesting the oxidation mechanism is similar to that which occurs during plasma oxidation.