Residual stress in lead titanate thin film on different substrates
Residual stress in lead titanate thin film on different substrates
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DOI：
10.1016/s0955-2219(03)00454-0
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发表时间：
2004
影响因子：
5.7
通讯作者：
T. Ohno;D. Fu;Hisao Suzuki;Hidetoshi Miyazaki;K. Ishikawa
中科院分区：
文献类型：
--
作者：
T. Ohno;D. Fu;Hisao Suzuki;Hidetoshi Miyazaki;K. Ishikawa
研究了基片热膨胀系数对钛酸铅薄膜残余应力的影响。由声子模位移计算了不同衬底上薄膜中的残余应力。此外，从晶格模式频率计算膜的介电常数。结果表明，残余应力和介电行为取决于衬底。
This paper describes the effect of thermal expansion coefficients of the substrates on the residual stress in lead titanate (PT) thin film. The residual stress in the film on the different substrates was calculated from the phonon mode shift. In addition, the dielectric constant for the film was calculated from the lattice mode frequency. As a result, the residual stress and the dielectric behavior depended upon the substrates.