Structural and optoelectronic properties of combining Nb-doped SrTiO 3 / ITO films on (001)-YSZ substrate
Structural and optoelectronic properties of combining Nb-doped SrTiO 3 / ITO films on (001)-YSZ substrate
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(001)-YSZ 衬底上 Nb 掺杂 SrTiO3/ITO 复合薄膜的结构和光电性能
DOI：
10.1016/j.rinp.2021.104436
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发表时间：
2021
影响因子：
5.3
通讯作者：
Shishen Yan
中科院分区：
文献类型：
--
作者：
Hua Zhou;Xiaxia Liao;Shanming Ke;Xin Liu;Jingdi Lu;Jinxing Zhang;Shujun Hu;Mingchun Xu;Lihui Bai;Shishen Yan
功能氧化物与常规导电膜结合是作为电极和电子传输层的有竞争力的替代候选物。本文研究了掺铌SrTiO_3（Nb-STO）与ITO复合膜的薄膜结构、界面结构和光电性能。采用激光分子束外延方法在（001）-YSZ衬底上制备了复合薄膜。high-.energy电子衍射、X射线衍射和透射电子显微镜显示Nb-STO层的方位角取向和双重对称旋转。有趣的是，在0.650 ° C或更高温度下生长的Nb-STO薄膜能够诱导ITO薄膜出现裂缝。此外，Nb-STO从400 ℃C.to700 ℃的生长温度改变了其结构，从非晶到多晶，Nb-STO/ITO界面关系，方块电阻（从25到83 Ω/sq）和电子迁移率（从40到2 cm·V-1·s-1）;然而，这对透射率几乎没有影响。这项工作提供了一个洞察功能氧化物和ITO的组合。用于制造的电子传输层。
Functional oxides combined with conventional conductive films are competitive alternative candidates as.electrode and electron transport layer. This work explored the film and interface structures and the optoelec-.tronic properties of the combined films of Nb-doped SrTiO 3 (Nb-STO) as a classical functional oxide and ITO. The.combined films were deposited on a (001)-YSZ substrate via laser molecular beam epitaxy method. In-situ high-.energy electron diffraction, X-ray diffraction, and transmission electron microscopy shew [011] Nb-STO azimuth.orientation and a two-fold symmetry rotation of the Nb-STO layer. Interestingly, the Nb-STO film growth at.650 ◦ C or higher was able to induce cracks in ITO film. Besides, the growth temperature of Nb-STO from 400 ◦ C.to 700 ◦ C changed its structures from amorphousness to polycrystal, the Nb-STO/ITO interface relationships,.sheet resistance (from 25 to 83 Ω/sq) and electron mobility (40 to 2 cm⋅V −1 ⋅s −1 ); however, this had little in-.fluence on the transmittance. This work provided an insight into the combination of functional oxides and ITO.for the fabrication of the electron transport layer.