A study on the defects in the fabrication of CMOS retrograde well including a buried layer using MeV ion implantation
A study on the defects in the fabrication of CMOS retrograde well including a buried layer using MeV ion implantation
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MeV离子注入制作含埋层CMOS逆行井缺陷研究
DOI：
10.1109/iit.1998.813837
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
J. Ro
中科院分区：
文献类型：
--
作者：
Y. Jang;T. Huh;J. Ro
近年来，MEV离子注入已被应用于互补金属氧化物半导体(CMOS)反向势垒工程领域。MeV离子引起的损伤是一个关键问题，尤其是在井下形成埋层的时候。观察到MEV B注入的埋层显示出明显改善的闭锁抑制特性。然而，结泄漏电流表现出作为离子剂量函数的临界行为。观察到棒状缺陷是造成漏电流的原因。棒状缺陷在R/subp/(投影射程)区附近产生，并在退火过程中向上生长到表面。根据对腐蚀坑密度的横截面检查，它们在700/spl deg/C和800/spl deg/C之间产生和扩展。它们在高于900/spl deg/C的更高温度下收缩或转变为长长的位错环。SIMS(二次离子质谱分析)和两步退火(700/spl deg/C/3/spl sim/6 hrs./spl rarr/900/spl deg/C/1 hr)的结果。表明在900/spl deg/C以上的高温下，间隙氧阻碍了现有棒状缺陷的收缩。
MeV ion implantation has been recently employed in the field of CMOS (complementary metal oxide semiconductor) retrograde well engineering. An issue on MeV ion induced damage is critical especially in forming a buried layer below the well. MeV B implanted buried layers were observed to show greatly improved characteristics of latchup suppression. Junction leakage current, however, showed a critical behavior as a function of ion dose. The rod-like defects were observed to be responsible for the leakage current. Rod-like defects were generated near the R/sub p/ (projected range) region and grown upward to the surface during annealing. According to cross sectional examination of etch pit density, they were generated and propagated between 700/spl deg/C and 800/spl deg/C. They shrink or change into long, elongated dislocation loops at higher temperatures above 900/spl deg/C. Results of SIMS (secondary ion mass spectroscopy) analyses and two-step-annealing (700/spl deg/C/3/spl sim/6 hrs./spl rarr/900/spl deg/C/1 hr.) indicate that interstitial oxygens impede shrinkage of existing rod-like defects at higher temperatures above 900/spl deg/C.