Interactions of Cu and Ni Impurities with Vacancy-related Point Defects in Czochralski-grown Si Crystals
Interactions of Cu and Ni Impurities with Vacancy-related Point Defects in Czochralski-grown Si Crystals
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直拉生长硅晶体中 Cu 和 Ni 杂质与空位相关点缺陷的相互作用
DOI：
10.1149/1.3096565
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发表时间：
2009
影响因子：
3.2
通讯作者：
B. Svensson
中科院分区：
文献类型：
--
作者：
V. Markevich;A. Peaker;I. F. Medvedeva;V. Gusakov;L. Murin;B. Svensson
通过对铜和镍污染的电子辐照Si样品的DLTS测量推断，空位（V2）和空位-氧配合物（VO）是移动Cu和Ni间隙原子的有效陷阱。这些杂质与VO和V2的相互作用导致VO和V2缺陷的退火增强以及新的电活性中心的形成。对Si:Cu晶体中的VO和V2缺陷进行强化退火后，出现了能级为Ec - 0.60 eV和Ec - 0.17 eV的电子陷阱。认为这些水平与Cu-VO和Cu-V2复合物的受体水平有关。通过量子化学计算确定了Cu-VO配合物的稳定构型。在Si:Ni晶体中，Ec - 0.365 eV的能级与包含至少一个Ni原子和辐射诱导缺陷的配合物有关。
It has been inferred from DLTS measurements on electron-irradiated Si samples contaminated with copper and nickel that divacancies (V2) and vacancy-oxygen complexes (VO) are effective traps for mobile Cu and Ni interstitial atoms. Interactions of these impurities with VO and V2 result in the enhanced annealing out of the VO and V2 defects as well as in the formation of new electrically active centers. An enhanced annealing of the VO and V2 defects in Si:Cu crystals is accompanied by an appearance of electron traps with the energy levels at Ec - 0.60 eV and Ec - 0.17 eV. It is argued that these levels are related to acceptor levels of Cu-VO and Cu-V2 complexes. The stable configuration of the Cu-VO complex has been determined by means of quantum-chemical calculations. In Si:Ni crystals an energy level at Ec - 0.365 eV is related to a complex incorporating at least one Ni atom and a radiation-induced defect.