LATTICE COMPRESSION FROM CONDUCTION ELECTRONS IN HEAVILY DOPED SI-AS
LATTICE COMPRESSION FROM CONDUCTION ELECTRONS IN HEAVILY DOPED SI-AS
复制标题
DOI：
10.1103/physrevlett.61.1748
复制
发表时间：
1988-10-10
影响因子：
8.6
通讯作者：
KAVANAGH, KL
中科院分区：
文献类型：
--
作者：
CARGILL, GS;ANGILELLO, J;KAVANAGH, KL
对重掺杂Si：As（5× 10 21 As cm− 3）的高分辨率X射线散射测量显示，相对于纯硅，其晶格压缩Δ a a=− 0.0019±0.0003，尽管扩展的X射线吸收精细结构测量显示，As-Si键长比通常的Si-Si键长大0.06±0.02 μ m。整体晶格压缩归因于导带态的增加，这减少了Si-Si键长。这些测量提供了硅导带边缘的流体静力学变形势的第一次直接测量，+3.3 ±0.7 eV。
High-resolution x-ray scattering measurements on heavily doped Si: As (5× 10 21 As cm− 3) show lattice compression relative to pure silicon, Δ a a=− 0.0019±0.0003, although extended x-ray-absorption fine-structure measurements show that the As-Si bond length is 0.06±0.02 Å greater than the usual Si-Si bond length. The overall lattice compression is attributed to increased population of conduction-band states which reduces Si-Si bond lengths. These measurements provide the first direct measurement of the hydrostatic deformation potential for the conduction-band edge in silicon,+ 3.3±0.7 eV.