A corrugated capacitor cell (CCC)
A corrugated capacitor cell (CCC)
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波纹电容器单元 (CCC)
DOI：
10.1109/t-ed.1984.21602
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发表时间：
1984
影响因子：
3.1
通讯作者：
S. Asai
中科院分区：
文献类型：
--
作者：
H. Sunami;T. Kure;N. Hashimoto;K. Itoh;T. Toyabe;S. Asai
基于单器件单元的概念，已经成功地开发了一种新的MOS动态随机存取存储器(DRAM)单元，其名称为“CCC”。这种CCC的特征是一个延伸到衬底中的蚀刻护城河存储电容器，导致存储电容CS几乎独立于其单元尺寸的增加。3×7微米2CCC的典型CS值为60 fF，具有4微米深的护城河和相当于15 nm二氧化硅厚度的电容器绝缘体。讨论了CCC的电容特性、使用32kbit单元阵列的DRAM操作、限制其紧密堆积的一些因素以及未来的考虑。
A new MOS dynamic random access memory (dRAM) cell named "CCC" has been successfully developed based on a one-device cell concept. This CCC is characterized by an etched-moat storage-capacitor extended into the substrate, resulting in almost independent increase in storage capacitance CSof its cell size. A typical CSvalue of 60 fF has been obtained with 3 × 7 µm2CCC having a 4-µm deep moat and a capacitor insulator equivalent to 15 nm SiO2in thickness. The CCC is discussed in terms of its capacitance characteristics, dRAM operation with unit 32-Kbit array, some limiting factor to its closer packing, and future considerations.