A picosecond laser-based ion source for injection into a high capacity EBIS in both accumulation and single pulsed modes
A picosecond laser-based ion source for injection into a high capacity EBIS in both accumulation and single pulsed modes
复制标题
基于皮秒激光的离子源，用于以累积模式和单脉冲模式注入高容量 EBIS
DOI：
10.1088/1742-6596/2244/1/012026
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发表时间：
2022
期刊：
影响因子：
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通讯作者：
Scott R.
中科院分区：
文献类型：
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作者：
Kondrashev S.;Beebe E;Kanesue T.;Okamura M.;Scott R.
与ns激光器相比，ps激光器具有产生低电荷态离子的优点，因为在ps激光烧蚀的情况下，对于短于10 ps的激光脉冲持续时间，固体靶上的热导率的影响可以忽略不计。通过使用具有高重复频率的激光器，可以产生长达数十毫秒的准连续1+离子束，使得可以利用EBIS在累积注入模式中捕获1+离子的能力。为了研究用于RHIC EBIS的积累注入激光离子源的可行性并确定其参数，我们研究了在8 ps脉冲内用1.27 mJ能量的ps激光产生的Al，Ti，Cu，Nb和Ta等离子体的性质。结果表明，积累和单脉冲注入模式都可以使用单个离子源几何形状和单个注入线，为基于ps激光器的RHIC EBIS阱外部注入离子源提供了最有吸引力的选择。
Ps-lasers have advantages for generation of low charge state ions compared to ns-lasers because the influence of heat conductivity on a solid target is negligible in the case of ps-laser ablation for laser pulse durations shorter than 10 ps. By using a laser with high rep-rate, it is possible to produce quasi continuous 1+ ion beams for periods up to tens of milliseconds, making it possible to take advantage of the ability of the EBIS to trap 1+ ions in accumulation injection mode. We studied the properties of Al, Ti, Cu, Nb, and Ta plasmas generated by a ps-laser with 1.27 mJ energy within an 8 ps pulse to investigate feasibility and specify parameters of a laser ion source for RHIC EBIS using accumulation injection mode. It is shown that a both accumulation and single pulsed injection modes are accessible with a single ion source geometry and single injection line, providing the most attractive option for an ion source for external injection into RHIC EBIS trap based on a ps-laser.