Sustaining efficiency at elevated power densities in InGaAs airbridge thermophotovoltaic cells
Sustaining efficiency at elevated power densities in InGaAs airbridge thermophotovoltaic cells
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DOI：
10.1016/j.solmat.2021.111523
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发表时间：
2022-03-01
影响因子：
6.9
通讯作者：
Lenert, Andrej
中科院分区：
文献类型：
--
作者：
Roy-Layinde, Bosun;Burger, Tobias;Lenert, Andrej
最近的研究表明，使用薄膜InGaAs电池的热光电效率达到了创纪录的高水平，但器件的功率密度仍然很低。功率密度的提高与许多热光伏(TPV)应用相关，从移动发电机到可再生电力的固定储能，需要对热和电荷载体进行有效管理。在这里，我们研究了在这样的条件下单结InGaAs空气桥单元(ABC)的使用。利用InGaAsABC在不同发射极和单元温度下的实验特性，建立了以载流子寿命和串联电阻为唯一拟合参数的预测器件模型。该模型的实用性通过其在确定在较高功率密度下改善性能的近期机会以及设计最大化总功率输出的热管理策略方面的使用而得到证明。在考虑了冷却电池所需的功率后，该模型表明，高材料质量的InGaAsABC在0.5W/cm2时可以达到-41%的峰值效率，对应于1070℃的发射极温度，维持效率在36%以上，最高可达1.5W/cm2。
Recent work has demonstrated record-high thermophotovoltaic efficiency using thin-film InGaAs cells, but the power density of devices remains low. Elevated power densities are relevant to many thermophotovoltaic (TPV) applications, ranging from mobile generators to stationary energy storage of renewable electricity, and require effective management of heat and charge carriers. Here we investigate the use of single-junction InGaAs air bridge cells (ABCs) under such conditions. Experimental characterization of an InGaAs ABC with varying emitter and cell temperature is used to develop a predictive device model where carrier lifetimes and series resistances are the sole fitting parameters. The utility of this model is demonstrated through its use in identifying near-term opportunities for improving performance at elevated power densities, and for designing a thermal management strategy that maximizes overall power output. After accounting for the power necessary to cool the cells, this model shows that an InGaAs ABC with high material quality can reach a peak efficiency of-41% at 0.5 W/cm2, corresponding to an emitter temperature of 1070 degrees C, and sustain efficiencies above 36% up to 1.5 W/cm2.