Resonant Gate Driver for a Normally-On GaN HEMT
Resonant Gate Driver for a Normally-On GaN HEMT
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用于常开型 GaN HEMT 的谐振栅极驱动器
DOI：
10.1109/jestpe.2016.2587058
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
田中俊彦
中科院分区：
文献类型：
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作者：
岡本昌幸;石橋卓治;山田洋明;田中俊彦
宽带隙半导体材料，如碳化硅和氮化镓（GaN）是下一代功率器件的有前途的材料。制作了一种用于电力电子变换器的常导通GaN基高电子迁移率晶体管（GaN HEMT）。然而，当GaN HEMT用于更高频率操作时，先前提出的栅极驱动电路中的功耗增加;对于常开GaN HEMT，具有更低功耗的新栅极驱动电路是必不可少的。本文提出了一种新的适用于我们研制的GaN HEMT的谐振栅极驱动电路。实验结果证明了所提出的谐振栅极驱动电路的有效性和相当的实用性。
Wide bandgap semiconductors such as silicon carbide and gallium nitride (GaN) are promising materials for next-generation power devices. A normally ON GaN-based high-electron-mobility transistor (GaN HEMT) is fabricated for power electronic converters. However, the power consumption in the previously proposed gate drive circuit increases when the GaN HEMT is used for higher frequency operations; a new gate drive circuit with a lower power consumption for the normally ON GaN HEMT is essential. In this paper, a new resonant gate drive circuit, most suitable for the GaN HEMT we had fabricated, is proposed. The validity and the considerable practicability of the proposed resonant gate drive circuit are demonstrated by the experimental results.