Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing
Stability of deep centers in 4H-SiC epitaxial layers during thermal annealing
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DOI：
10.1063/1.1790032
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发表时间：
2004-09
影响因子：
4
通讯作者：
Y. Negoro;T. Kimoto;H. Matsunami
中科院分区：
文献类型：
--
作者：
Y. Negoro;T. Kimoto;H. Matsunami
采用电容-电压测量和深能级瞬态谱（DLTS）研究了热壁化学气相沉积法生长的N型4 H-SiC外延层的深中心。DLTS光谱显示，与生长态材料相比，通过在1700°C下退火，深中心的浓度降低了一个数量级。在1700°C或更高的温度下退火除去具有导带边缘以下0.59±0.03eV的能级的Z1 scin 2中心和具有1.66±0.11eV的能级的EH 6 scin 7中心。
N-type epitaxial 4H-SiC layers grown by hot-wall chemical vapor deposition were investigated with regard to deep centers by capacitance-voltage measurements and deep level transient spectroscopy (DLTS). The DLTS spectra revealed that the concentrations of deep centers were reduced by one order of magnitude by annealing at 1700°C, compared to those in an as-grown material. The Z1∕2 center with an energy level of 0.59±0.03eV and the EH6∕7 center with an energy level of 1.66±0.11eV below the conduction band edge are annealed out at a temperature of 1700°C or higher.