Sub-monolayer quantum dot quantum cascade mid-infrared photodetector
Sub-monolayer quantum dot quantum cascade mid-infrared photodetector
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DOI:
10.1063/1.5011239
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发表时间:
2017-12-18
影响因子:
4
通讯作者:
Chen, Baile
中科院分区:
文献类型:
--
作者:
Huang, Jian;Guo, Daqian;Chen, Baile
In this work, we demonstrate a sub-monolayer quantum dot quantum cascade photodetector grown on GaAs for photovoltaic mid-infrared photo-detection. The detector shows a normal-incident peak responsivity of 1.90mA/W at the wavelength of 6.05 mu m and a resistance-area product of 1.54 x 10(8) Omega cm(2) at 77 K. The corresponding specific detectivity is 3.22 x 10(11) cm.Hz(1/ 2)/W. Published by AIP Publishing.