Tunneling magnetoresistance of MnAs thin film/GaAs/AlAs/GaAs:MnAs nanoclusters and its AlAs barrier thickness dependence
Tunneling magnetoresistance of MnAs thin film/GaAs/AlAs/GaAs:MnAs nanoclusters and its AlAs barrier thickness dependence
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DOI：
10.1063/1.2405399
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发表时间：
2006-12
影响因子：
4
通讯作者：
P. Hai;M. Yokoyama;S. Ohya;Masaaki Tanaka
中科院分区：
文献类型：
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作者：
P. Hai;M. Yokoyama;S. Ohya;Masaaki Tanaka
作者研究了由 MnAs 薄膜 (20nm)∕GaAs(1nm)∕AlAs(d=2–5nm)∕GaAs:MnAs 纳米团簇 (10nm) 组成的磁隧道结 (MTJ) 的隧道磁阻 (TMR)。 GaAs:MnAs 材料在 GaAs 基质中含有铁磁 MnAs 纳米团簇，可用作自旋注入器和自旋探测器。他们观察到随着 AlAs 势垒厚度的增加，TMR 比率出现振荡行为，这可以通过 AlAs 势垒中两个 X 谷相关波函数的量子干涉来解释。
The authors have investigated tunneling magnetoresistance (TMR) of magnetic tunnel junctions (MTJs) consisting of MnAs thin film (20nm)∕GaAs(1nm)∕AlAs(d=2–5nm)∕GaAs:MnAs nanoclusters (10nm). The GaAs:MnAs material contains ferromagnetic MnAs nanoclusters in a GaAs matrix and acts as a spin injector and a spin detector. They observed an oscillatory behavior of the TMR ratio with the increasing AlAs barrier thickness, which can be explained by the quantum interference of two X-valley related wave functions in the AlAs barrier.