The Apparent Band Gap of p-Doped H-Passivated Si (111) with a Thin Film of an Ionic Liquid on Top
The Apparent Band Gap of p-Doped H-Passivated Si (111) with a Thin Film of an Ionic Liquid on Top
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顶部有离子液体薄膜的 p 掺杂 H 钝化 Si (111) 的表观带隙
DOI：
10.1021/acs.jpcc.7b12009
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发表时间：
2018
影响因子：
3.7
通讯作者：
F. Endres
中科院分区：
文献类型：
--
作者：
A. Borodin;N. Borisenko;F. Endres
用原位XPS和扫描隧道谱(STS)研究了离子液体对氢端Si(111)禁带宽度的影响。电子结构的变化可以用针尖诱导的能带弯曲模型来描述。结果表明，IL-1-乙基-3-甲基咪唑双(三氟甲基磺酰基)亚胺([EMIM][TFSI])影响了Si(111)：H的电子结构，导致了禁带宽度的变化。此外，增加沉积的IL膜的厚度可以改变Si(111)：H的表观带隙，从而改变半导体材料的性质。
The influence of an ionic liquid on the band gap of H-terminated Si(111) was investigated using in situ XPS and scanning tunneling spectroscopy (STS). The changes in the electronic structure can be described based on tip-induced band bending models. The results suggest that the IL 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMIm][TFSI]) influences the electronic structure of Si (111):H, resulting in a change of the band gap. Furthermore, the apparent band gap of Si (111):H can be varied by increasing the thickness of the deposited IL film, which in turn alters the properties of the semiconductor material.