Pulsed Plasma Assisted Cl-Doped Graphene Nano Dots with Semiconducting Property
Pulsed Plasma Assisted Cl-Doped Graphene Nano Dots with Semiconducting Property
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DOI：
10.1246/cl.200108
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发表时间：
2020-03
影响因子：
1.6
通讯作者：
M. Fukuda;Md. Saidul Islam;T. Mashimo;S. Hayami
中科院分区：
文献类型：
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作者：
M. Fukuda;Md. Saidul Islam;T. Mashimo;S. Hayami
在此，我们报告了大量生产的Cl-掺杂的石墨烯纳米点，通过实施脉冲等离子体在石墨棒在CHCl 3介质。Cl掺杂的石墨烯显示出带隙，这是因为...
Herein we report the mass-production of Cl-doped graphene nanodots through the implementation of pulsed plasma on graphite rod in CHCl3 medium. The Cl-doped graphene shows the band gap, which is as...