Microstructure and Crystallographic Orientation Dependence of Electrical Properties in Lead Zirconate Thin Films Prepared by Sol–Gel Process
Microstructure and Crystallographic Orientation Dependence of Electrical Properties in Lead Zirconate Thin Films Prepared by Sol–Gel Process
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DOI：
10.1143/jjap.44.8606
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发表时间：
2005-12
影响因子：
1.5
通讯作者：
E. M. Alkoy;S. Alkoy;T. Shiosaki
中科院分区：
文献类型：
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作者：
E. M. Alkoy;S. Alkoy;T. Shiosaki
采用溶胶-凝胶法在Pt（111）/Ti/SiO2/Si（100）衬底上制备了锆酸铅（PbZrO 3）薄膜。通过改变热解阶段的干燥温度，得到了没有择优取向和[111]伪立方织构（表示为[111]pc）的薄膜。随机取向的膜被发现具有两相微结构，其由大的玫瑰花型钙钛矿区域与位于其间的纳米晶相组成。随着Pb含量的增加，薄膜表面的团聚体比例逐渐增加，并覆盖整个薄膜表面。具有[111]pc取向的薄膜具有均匀的微观结构，具有微米尺寸的晶粒。薄膜的微观结构和取向对薄膜的电学性能有显著的影响。[111]pc取向的薄膜在550 kV/cm电压下呈现方形双电滞回线，最大极化（Pmax）为61×10- 6C/cm 2，而无择优取向的化学计量比薄膜的Pmax为36×10- 6C/cm 2，电滞回线较窄。
Lead zirconate (PbZrO3) thin films are grown on Pt(111)/Ti/SiO2/Si(100) substrates by sol–gel using precursor solutions with stoichiometric and 20 mol % excess Pb. Films with no preferred orientation and [111] pseudocubic texture (denoted as [111]pc) are obtained by changing the drying temperature at the pyrolysis stage. Randomly oriented films were found to have a two-phase microstructure consisting of large rosette-type perovskite regions with a nanocrystalline phase located in between. The ratio of the rosettes increase to cover the entire surface of the films with the increase of Pb content. The films with [111]pc orientation have a uniform microstructure with micron size grains. The electrical properties of the films were influenced markedly by the microstructure and orientation of the films. The [111]pc oriented films exhibit a square-like double hysteresis loop with maximum polarization (Pmax) reaching 61×10-6 C/cm2 under 550 kV/cm, whereas stoichiometric films with no preferred orientation have a Pmax of 36×10-6 C/cm2 with slimmer hysteresis curves.