Shunt resistance and saturation current determination in CdTe and CIGS solar cells. Part 2: application to experimental IV measurements and comparison with other methods
Shunt resistance and saturation current determination in CdTe and CIGS solar cells. Part 2: application to experimental IV measurements and comparison with other methods
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DOI：
10.1088/1361-6641/aab018
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发表时间：
2018-04-01
影响因子：
1.9
通讯作者：
Contreras-Puente, Gerardo-Silverio
中科院分区：
文献类型：
--
作者：
Rangel-Kuoppa, Victor-Tapio;Albor-Aguilera, Maria-de-Lourdes;Contreras-Puente, Gerardo-Silverio
在本系列文章的第 2 部分中，第 1 部分中提出的程序，即单二极管模型内太阳能电池电流电压 (I-V) 测量的分流电阻 (R-sh) 和饱和电流 (I-sat) 的新参数提取技术，应用于 CdS-CdTe 和 CIGS-CdS 太阳能电池。首先，使用Cheung方法获得串联电阻（R-s）和理想因子n。然后，使用第 1 部分中提出的程序 A 和 B 来获取 R-sh 和 I-sat。该程序与其他两个常用程序进行了比较。通过我们的方法提取的参数使用的模拟 I-V 曲线可以获得更好的精度。此外，使用本研究提出的方法模拟的 I-V 曲线的积分百分比误差比使用其他两种方法的积分百分比误差小一个数量级。
In this Part 2 of this series of articles, the procedure proposed in Part 1, namely a new parameter extraction technique of the shunt resistance (R-sh) and saturation current (I-sat) of a current-voltage (I-V) measurement of a solar cell, within the one-diode model, is applied to CdS-CdTe and CIGS-CdS solar cells. First, the Cheung method is used to obtain the series resistance (R-s) and the ideality factor n. Afterwards, procedures A and B proposed in Part 1 are used to obtain R-sh and I-sat. The procedure is compared with two other commonly used procedures. Better accuracy on the simulated I-V curves used with the parameters extracted by our method is obtained. Also, the integral percentage errors from the simulated I-V curves using the method proposed in this study are one order of magnitude smaller compared with the integral percentage errors using the other two methods.