Site of the Er3+ optical centers of the room-temperature emission in Er-doped porous silicon and the excitation mechanism
Site of the Er3+ optical centers of the room-temperature emission in Er-doped porous silicon and the excitation mechanism
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DOI：
10.1016/s0022-2313(99)00342-7
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发表时间：
2000-05
影响因子：
3.6
通讯作者：
Wei Wang;H. Isshiki;S. Yugo;R. Saito;T. Kimura
中科院分区：
文献类型：
--
作者：
Wei Wang;H. Isshiki;S. Yugo;R. Saito;T. Kimura
为了弄清楚Er3+离子的4f内跃迁在1.54 μm处产生强室温发光的原因，研究了通过浸没形成的Er掺杂多孔硅(PS:Er)中Er3+发光中心的位置。使用相同的 PS 宿主，比较了浸入 ErCl3/酒精溶液中形成的 PS : Er 样品和注入 Er 的 PS 的发光光谱、强度和荧光寿命的温度猝灭。 PS：通过浸入形成的 Er 样品在强度和荧光寿命方面表现出较小的温度猝灭，从而在室温下产生强烈的发光。另一方面，通过Er离子注入PS形成的PS：Er样品表现出与Er注入的晶体Si几乎相同的强温度猝灭。这些结果表明，通过浸没形成的 PS : Er 中负责强 RT 1.54 μm 发光的 Er 离子位点不在 Si 纳米晶内部，而是在 Si 纳米晶表面。
Sites of the Er3+luminescent centers in Er-doped porous silicon ( PS : Er ) formed by immersion are studied in order to make clear the cause of the strong room temperature luminescence at 1.54 μm due to the 4f intra-transition of Er3+ions. The luminescence spectra and the temperature quenching of the intensity and the fluorescence lifetime are compared between PS : Er samples formed by immersion in an ErCl3/alcohol solution and Er-implanted PS, using the same PS hosts. PS : Er samples formed by immersion show a small temperature quenching in the intensity and the fluorescence lifetime, resulting in a strong luminescence at RT. On the other hand, PS : Er samples formed by Er ion implantation into PS shows almost the same strong temperature quenching as the Er-implanted crystalline Si. These results indicate that the sites of Er ions responsible for the strong RT 1.54 μm luminescence in PS : Er formed by immersion is not inside Si nanocrystals but on the surface of Si nanocrystals.