Temperature dependency and current transport mechanisms of Pd/V/n-type InP schottky rectifiers
Temperature dependency and current transport mechanisms of Pd/V/n-type InP schottky rectifiers
复制标题
DOI：
10.5185/amlett.2012.1316
复制
发表时间：
2012-07
期刊：
影响因子：
--
通讯作者：
S. Naik;V. Reddy
中科院分区：
文献类型：
--
作者：
S. Naik;V. Reddy
在200-400 K温度范围内，研究了n型InP上Pd/V肖特基接触的电流-电压（I-V）和电容-电压（C-V）特性。在200 ~ 400 K温度范围内，由I-V和C-V特性估算的Pd/V/n型InP SBD的势垒高度分别为0.48 ~ 0.65 eV（I-V）和0.85 ~ 0.69 eV（C-V），理想因子（n）为4.87 ~ 1.58。结果表明，理想因子随温度的升高而减小，势垒高度随温度的升高而增大。这种行为是由于障碍的不均匀性，假设在界面处的障碍高度的高斯分布。此外，它被发现的Pd/V/n-InP肖特基二极管的串联电阻（RS）值估计从张的函数是强烈的温度依赖性。绘制了零偏压势垒高度的关系曲线，证明了势垒的高斯分布
We have investigated the temperature-dependent current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Pd/V Schottky contacts on n-type InP in the temperature range of 200-400 K. The estimated barrier height for the Pd/V/n-type InP SBDs from the I-V and C-V characteristics have varied from 0.48 eV to 0.65 eV (I-V) and 0.85 eV to 0.69 eV (C-V), and the ideality factor (n) from 4.87 to 1.58 in the temperature range 200 to 400 K. It has been observed that the ideality factor decreases while the barrier height increases with increase of temperature. Such behaviour is attributed to barrier inhomogeneities by assuming a Gaussian distribution of barrier heights at the interface. Further, it is found that the series resistance (RS) values of Pd/V/n-InP Schottky diode estimated from Cheung's function are strongly temperature dependent. The zero-bias barrier height bo versus 1/2kT plot has been drawn to obtain the evidence of a Gaussian distribution of the barrier