Part I: On the Behavior of STI-Type DeNMOS Device Under ESD Conditions
Part I: On the Behavior of STI-Type DeNMOS Device Under ESD Conditions
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DOI：
10.1109/ted.2010.2055276
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发表时间：
2010-07
影响因子：
3.1
通讯作者：
M. Shrivastava;H. Gossner;M. Baghini;V. Rao
中科院分区：
文献类型：
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作者：
M. Shrivastava;H. Gossner;M. Baghini;V. Rao
我们目前的实验和模拟研究的浅沟槽隔离（STI）型漏极扩展的n沟道金属氧化物半导体器件在人体模型（HBM）的静电放电（ESD）的条件下。物理洞察脉冲到脉冲的不稳定性。详细讨论了结击穿、寄生双极触发和基极推出效应等各种事件的电流（ITLP）和时间演化。介绍了二维和三维仿真建模方法的区别，讨论了基于计算机辅助设计的三维建模技术的重要性。此外，一个更深层次的物理见解对基地推出，这表明显着的功耗由于空间电荷的积累，这是发现在2-D平面中的自加热的发病。
We present experimental and simulation studies of shallow trench isolation (STI)-type drain-extended n-channel metal-oxide-semiconductor devices under human body model (HBM)-like electrostatic discharge (ESD) conditions. Physical insight toward pulse-to-pulse instability is given. Both the current (ITLP) and time evolution of various events such as junction breakdown, parasitic bipolar triggering, and the base push-out effect are discussed in detail. Differences between the 2-D and 3-D simulation (modeling) approaches are presented, and the importance of 3-D technology-computer-aided-design-based modeling is discussed. Furthermore, a deeper physical insight toward the base push-out is given, which shows significant power dissipation due of space charge build-up, which is found at the onset of self-heating in the 2-D plane.