Optical studies on In x Ga 1-x N quantum disks
Optical studies on In x Ga 1-x N quantum disks
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In x Ga 1-x N 量子盘的光学研究
DOI：
10.1117/12.877149
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
Holmes M
中科院分区：
文献类型：
--
作者：
Holmes M
时间积分和时间分辨的微光致发光的研究已经进行了嵌入在GaN纳米柱中的InxGa 1-xN量子盘。分析结果的背景下，目前的理论，关于一个不均匀的应变分布在磁盘中，这是理论上产生横向电荷分离的磁盘应变引起的带弯曲，不均匀的极化场分布，和费米表面钉扎。得出的结论是，没有横向分离的载流子发生在量子盘的调查。
Time integrated and time resolved microphotoluminescence studies have been performed on InxGa1-xN quantum disks embedded in GaN nanocolumns. The results are analysed in context of current theories regarding an inhomogeneous strain distribution in the disk, which is theorised to generate lateral charge separation in the disks by strain induced band bending, an inhomogeneous polarization field distribution, and Fermi surface pinning. It is concluded that no lateral separation of carriers occurs in the quantum discs under investigation.