Measurement of buried oxide thermal conductivity for accurate electrothermal simulation of SOI device
Measurement of buried oxide thermal conductivity for accurate electrothermal simulation of SOI device
复制标题
测量掩埋氧化物热导率，以实现 SOI 器件的精确电热模拟
DOI：
10.1109/16.737466
复制
发表时间：
1999
影响因子：
3.1
通讯作者：
C. F. Edwards
中科院分区：
文献类型：
--
作者：
B. Tenbroek;R. Bunyan;G. Whiting;W. Redman;M. Uren;K. Brunson;M.S.L. Lee;C. F. Edwards
有限元模拟结果表明，埋地氧化物的导热系数是模拟绝缘体上硅（SOI）器件热行为的重要参数。不同形式SiO/ sub2 /的电导率存在不确定性，特别是埋藏氧化物的电导率。本文提出了一种测量这种电导率的新方法，使用与标准双极或CMOS工艺兼容的结构。在室温下，300 nm的BESOI和420 nm的SIMOX的导热系数分别为0.66和0.82 W/mK。测得的导热系数随温度的变化与SiO/sub - 2/的整体行为吻合较好。利用这些提取的热导率值，获得了MOSFET热阻测量值与有限元模拟结果较好的一致性。还表明，硅衬底在决定器件热阻中的作用可以用一个简单的解析模型来计算。当人们希望准确地计算给定电路中各个晶体管的热阻时，这是很重要的。
Finite element simulations demonstrate that the thermal conductivity of the buried oxide is an important parameter for the modeling of the thermal behavior of silicon-on insulator (SOI) devices. There is uncertainty about the conductivity of different forms of SiO/sub 2/, particularly that of buried oxides. This paper presents a novel approach to measure this conductivity, using structures that are compatible with standard bipolar or CMOS processes. Thermal conductivity values of 0.66 and 0.82 W/mK, respectively, were found for 300-nm BESOI and 420-nm SIMOX oxides at room temperature. The measured variations of thermal conducitivity with temperature agree well with bulk SiO/sub 2/ behavior. Better agreement between measurement and finite element simulation of MOSFET thermal resistance is obtained by using these extracted thermal conductivity values. It is also shown that the role of the silicon substrate in determining the thermal resistance of the device can be calculated using a simple analytical model. This is important when one wishes to calculate accurately individual thermal resistances of transistors in a given circuit.