Transient phases during fast crystallization of organic thin films from solution
Transient phases during fast crystallization of organic thin films from solution
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DOI：
10.1063/1.4939464
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发表时间：
2016-01-01
期刊：
影响因子：
6.1
通讯作者：
Headrick, Randall L.
中科院分区：
文献类型：
--
作者：
Wan, Jing;Li, Yang;Headrick, Randall L.
采用微束掠入射X射线散射技术，研究了空心笔书写法制备的2，7-二辛基[1]苯并噻吩并[3，2-B][1]苯并噻吩（C-8-BTBT）有机半导体薄膜。在衬底温度高达约93摄氏度的结晶过程中观察到多个瞬态相。C-8-BTBT的层状近晶液晶相最初形成并先于层间有序化，随后是温度> 60 ° C的瞬时结晶相，并最终是稳定相。基于这些结果，我们展示了一种方法，在高速加工过程中产生极大的晶粒尺寸和高载流子迁移率。对于高写入速度（25 mm/s），已经观察到高达3.0 cm（2）/V-s的迁移率。(C)2016年作者。所有文章内容，除非另有说明，是根据知识共享署名3.0未移植许可证许可。
We report an in situ microbeam grazing incidence X-ray scattering study of 2,7-dioctyl[1] benzothieno[3,2-b][1] benzothiophene (C-8-BTBT) organic semiconductor thin film deposition by hollow pen writing. Multiple transient phases are observed during the crystallization for substrate temperatures up to approximate to 93 degrees C. The layered smectic liquid-crystalline phase of C-8-BTBT initially forms and preceedes interlayer ordering, followed by a transient crystalline phase for temperature > 60 degrees C, and ultimately the stable phase. Based on these results, we demonstrate a method to produce extremely large grain size and high carrier mobility during highspeed processing. For high writing speed (25 mm/s), mobility up to 3.0 cm(2)/V-s has been observed. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.