Radiation Hardness Evaluation of SiC-BGSIT
Radiation Hardness Evaluation of SiC-BGSIT
复制标题
SiC-BGSIT的辐射硬度评估
DOI：
10.4028/www.scientific.net/msf.645-648.941
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
T. Yatsuo
中科院分区：
文献类型：
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作者：
Yasunori Tanaka;S. Onoda;A. Takatsuka;T. Ohshima;T. Yatsuo
在这项研究中，我们评估了SiC埋栅静电感应晶体管（SiC-BGSIT）和硅基开关器件的辐射硬度高达10 MGy（SiO2）的吸收剂量。Si-IGBT在辐照初期（>~ 0.1MGy（SiO2）），由于康普顿电子产生的体损伤（如硅双极晶体管中的增益退化），导通电压Von过度退化。由于栅SiO2中空穴陷阱的产生与SiO2/Si界面态之间的竞争机制，Si-MOSFET的阈值电压Vth对辐照非常敏感。此外，MOSFET的击穿电压VBR和漏电流Ileak随吸收剂量的增加而显著下降。而SiC-BGSIT的电学性能在10 MGy（SiO2）辐照后仍保持稳定。
In this study, we evaluated the radiation hardness of SiC Buried Gate Static Induction Transistors (SiC-BGSITs) and Si-based switching devices up to the absorbed dose of 10 MGy(SiO2). The on-voltage Von of Si-IGBT degraded excessively at the early stage of the irradiation (>~0.1 MGy(SiO2)) due to the bulk damage produced by Compton electrons like the gain degradation in Si bipolar transistors. The threshold voltage Vth of Si-MOSFET was very sensitive against the radiation due to the competing mechanism between the generation of the hole traps in the gate SiO2 and the SiO2/Si interface states. Moreover, the breakdown voltage VBR and leak current Ileak of MOSFET degraded significantly against the absorbed dose. While, the electrical properties of SiC-BGSIT was very stable even after the irradiation of 10 MGy(SiO2).