Enhanced luminescence efficiency of GaN:Eu-based light-emitting diodes by localized surface plasmons utilizing gold nanoparticles
Enhanced luminescence efficiency of GaN:Eu-based light-emitting diodes by localized surface plasmons utilizing gold nanoparticles
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DOI：
10.7567/1347-4065/ab0ad1
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发表时间：
2019-05
影响因子：
1.5
通讯作者：
J. Tatebayashi;Tomoya M. Yamada;Tomohiro Inaba;S. Ichikawa;Y. Fujiwara
中科院分区：
文献类型：
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作者：
J. Tatebayashi;Tomoya M. Yamada;Tomohiro Inaba;S. Ichikawa;Y. Fujiwara
我们证明了利用金纳米颗粒（NPs）的表面等离子体增强GaN：Eu基发光二极管（LED）的发光效率。金薄膜沉积在GaN：Eu层上，随后热退火以形成金NP。纳米粒子的尺寸可以通过改变膜的厚度来控制。当薄膜厚度为15 nm时，具有纳米颗粒的GaN：Eu LED的室温光致发光（PL）强度比没有纳米颗粒的GaN：Eu LED的室温光致发光（PL）强度增加了1.42倍，这归因于由于与局域表面等离子体激元耦合而增强的光提取效率。在10 K的时间分辨PL光谱的发光二极管与纳米粒子显示较短的寿命，支持与局部表面等离子体激元耦合的存在。具有纳米颗粒的LED的注入电流-光输出强度曲线显示出由于与局部表面等离子体激元的耦合而使输出功率增强了1.3倍。
We demonstrate the enhancement of luminescence efficiency in GaN:Eu-based light emitting diodes (LEDs) by surface plasmons utilizing gold nanoparticles (NPs). A gold thin film is deposited on a GaN:Eu layer and subsequently thermal-annealed to form gold NPs. The size of the NPs can be controlled by changing the thickness of the films. The room-temperature photoluminescence (PL) intensity of the GaN:Eu LEDs with the NPs increases by 1.42-times compared with those without the NPs when the film thickness is 15 nm, which is attributed to enhanced light extraction efficiency due to coupling with localized surface plasmons. Time-resolved PL spectra at 10 K of the LEDs with the NPs show a shorter lifetime, supporting the existence of the coupling with local surface plasmons. The injection current-light output intensity profiles of the LEDs with the NPs shows 1.3-times enhancement of the output power due to coupling with local surface plasmons.